Friday, September 7, 2012
12V Low side and High side PWM Motor/Light Controller
These two schematics are variations on addition PWM circuit that I designed. The diagrams are for 12V operation alone and there are aerial ancillary (common ground) and low ancillary (common +12V) versions. The low ancillary adaptation of the ambit uses an N Channel FET, the aerial ancillary adaptation of the circuit uses a P Channel FET. N Channel accessories tend to handle added accepted than P Channel devices, they are additionally beneath expensive. The aerial ancillary adaptation of the ambit is advantageous back one ancillary of the bulk has to be grounded.
This Circuit can about-face a adequately aerial bulk of current, an IRFZ34N MOSFET can handle over 35 Amps if affiliated to a able calefaction sink. Higher ability FETs, such as the IRFZ48N or IRF1010Z can be commissioned if alike beyond currents are required. It is additionally accessible to affix assorted FETs in alongside for alike added accepted capacity. Always use thermally conductive grease amid the FET and the calefaction sink, and bethink that the calefaction bore is electrically live.
Inductive endless (motors) may crave appropriate affliction back they can accomplish ample voltage spikes that can accident the MOSFET. Replacing the 1N4002 with a fast accretion diode may advice blot the about-face voltage bang back active an anterior bulk such as a motor. If you use these circuits for abstracts with electric vehicles, be abiding to install a ambit breaker in alternation with the battery, the ambit breaker should be accessible to ability by the driver. This is abnormally important due to the actuality that back MOSFETs fail, they generally abbreviate out, abrogation the motor on at abounding speed.
Note that the pwm ascendancy has an adverse aftereffect on these two circuits, the low ancillary adaptation is on with a aerial pin 7 achievement voltage and the aerial ancillary adaptation is on with a low output.
The inductor on the aboideau ancillary of the ability MOSFET transistor can be a ferrite bean or a few turns of wire captivated about a 10 ohm, 1/4W resistor. The purpose of this allotment is to anticipate RF oscillations from occurring in the MOSFET circuitry.